Single-crystal CdSe nanoribbon field-effect transistors and photoelectric applications

Field-effect transistors made of individual CdSe nanoribbons were fabricated and characterized. The CdSe nanoribbon showed n-type semiconducting characteristics, while the transistors revealed a threshold voltage of 20.9V, an on-off ratio >104, and an electron mobility of 9.6cm2∕Vs in the dark. CdSe nanoribbons showed high sensitivity to above-band-gap irradiation with four-orders-of-magnitude increase in conductance and millisecond response speed. The increase of electron mobility due to light irradiation was demonstrated to contribute to increased photoconductance.