Reduced lattice temperature high-speed operation of pseudomorphic InGaAs/GaAs field-effect transistors

This letter presents a detailed study of the temperature dependence of submicron pseudomorphic InGaAs on GaAs substrate modulation doped field-effect transistors (MODFETs), doped-channel metal insulator field effect transistors (MISFETs), and metal semiconductor field-effect transistors (MESFETs). We determine similar variation in the measured extrinsic current gain cutoff frequency, FT, and similar dependencies of the effective electron velocity, veff, with reduced lattice temperature for the different field-effect transistors. The veff∼T−b where 0.15