We describe the preparation of high-T c thin film intrinsic stack junctions (mesas) and first realizations with TBCCO films. For contact areas ranging from 3*3 to 7*7 mu m 2 and stack heights between 50 and 100 nm we find intrinsic Josephson behaviour as it is well known from experiments with single crystals.
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Schmidl et al. (1995) studied this question.