Pentacene-based thin-film transistors with multiwalled carbon nanotube source and drain electrodes

In this letter, the authors propose a practical and reliable approach—using deposited multiwalled carbon nanotubes (MWCNTs) as source and drain electrodes—for reducing the contact resistance (Rc) in pentacene-based bottom-contact thin-film transistors. The value of Rc of the devices was closely linked to the resultant length of the deposited MWCNTs; the lowest value was 3×108Ωμm. The largest saturation mobility was 0.14cm2∕Vs; this value reached up to three times higher when the threshold voltage was determined using the maximum transconductance (Gm,max) extrapolation method, rather than the constant current method. The on/off ratio was more than 106.