Interband electronic Raman scattering for excitations from the light-hole band to the heavy-hole band in p-type InSb and from the valence band to the conduction band in n-type gray tin has been studied. The effect of the residual Coulomb interaction between the Bloch electrons has been incorporated by treating it within the framework of the random-phase approximation, and by including the vertex correction due to the final-state electron-hole interaction. Both the effects of the Coulomb interaction are found to play significant roles in enhancing the scattering cross section near the thresholds.
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Srivastava et al. (1973) studied this question.
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