The design and fabrication of a position-sensing photodetector that is sensitive to a wavelength of 1.55 mu m are reported. This device is based on the photo-lateral effect and uses an In/sub 0.53/Ga/sub 0.47/As absorbing layer that is lattice matched to an InP substrate. The output signal (I/sub 1/-I/sub 2/)/(I/sub 1/+I/sub 2/) varies linearly with respect to the position of the incident beam. The responsivity of 0.75 A/W is uniform over the length of the photodetector. The device is intended for video rate applications and has a -3-dB cutoff frequency of 7 MHz.>
No takes yet. Share an insight, caveat, or question.
Maigné et al. (1990) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: