Controllable Functional Layer and Temperature-Dependent Characteristic in Niobium Oxide Insulator–Metal Transition Selector

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The niobium oxide insulator-metal transition selector device is considered to be a rectifying device with great potential. However, the lack of research on the experimental parameters and the complex physical mechanism of the NbO2 device seriously affected its development. In this article, a controllable intermediate functional layer of NbOxwas reported in the Pt/NbOx/TiN device subjected to different forming compliance currents (FCCs) and compliance currents (CCs). The different FCCs and CCs changed the size of the Nb2O5and NbO2layers within the NbOxlayer, which further affected the threshold voltage. The result helped to realize the control of the NbOxfunctional layer, which was also of great significance for the adjustment of the experimental parameters in the preparation experiment according to the required performance. Furthermore, the I-V characteristics and switching times at different ambient temperatures were carried out, showing the specific dependency of the device on temperature. Between them, the simulated switching time of 2 ns at room temperature proved that the selector had a great application prospect in high speed and high-density storage or logic switch. Generally, the whole research helped to improve the control of the interlayer structure and the performance of the device for application in 3-D crossbar arrays, and provided a valid model to study the device.