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High-performance infrared (IR) nonlinear optical (NLO) materials with large NLO response and suitable birefringence are urgently needed for various applications. A Hg-based IR NLO material KHg 4 Ga 5 Se 12 with such desirable properties has been newly discovered. In the structure, obviously distorted HgSe 4 and GaSe 4 tetrahedra are connected to each other by vertex-sharing to form a three-dimensional framework with the counterion K + residing in the cavities. Remarkably, all the NLO-active building units in the title compound are arranged in a completely parallel manner. Such a topological structure and the large susceptibility of the Hg–Se bonds enable the material to achieve good phase-matchability with a tremendous powder second harmonic generation (SHG) response at 2.09 μm that is about 20-times that of the benchmark material AgGaS 2 (one of the largest responses among all the phase-matchable IR NLO chalcogenides reported to date). The optical band gap of KHg 4 Ga 5 Se 12 was determined as 1.61 eV. Moreover, on the basis of the electronic band structure, the real-space atom-cutting analysis, the SHG-weighted electronic densities, and the local dipole moments calculations, the origin of the superior linear and nonlinear optical properties of the title compound is ascribed to the (Hg/Ga)Se 4 group. The calculated values for the maximum coefficient d 33 and birefringence (Δn) at 2.09 μm are −65.257 pm/V and 0.072, respectively. Such values agree well with experimental observations. Our study demonstrates that Hg-based metal chalcogenides are a class of IR NLO material with competitive features (good phase-matchability, very large SHG efficiency, wide transparency) desirable for practical applications.
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Zhou et al. (2017) studied this question.
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