Cathodoluminescence (CL) scanning electron microscopy and positron annihilation techniques have been used to investigate the distribution of defects in GaAs:Te wafers. Dislocation density and near-band-edge CL profiles along the wafer have different shapes. Positron lifetime measurements do not show spatial changes of vacancy concentration in the wafers, but a higher vacancy concentration has been detected in the Te-doped samples relative to SI samples. Results are discussed in terms of vacancies and impurity vacancy complexes.
No takes yet. Share an insight, caveat, or question.
Méndez et al. (1988) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: