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The electronic structure of Zr₃{N}₄$, grown by low-energy (0.25 keV) ${N}₂⁺$ implantation of polycrystalline zirconium has been investigated by x-ray photoelectron spectroscopy. Both the valence-band and core-level spectra demonstrate the insulating characteristics of ${Zr}₃N₄ as well as the metal-insulator phase transition in ZrNₓ when x{}1.33.
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Prieto et al. (1993) studied this question.
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