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The deposition of diamond films by an argon–methane–oxygen mixture in a microwave plasma system is described. Our results demonstrate that it is possible to grow diamond without the addition of hydrogen. The oxygen content is a critical parameter for the phase purity of the deposited films. Mass spectroscopic measurements show that oxygen is suppressing the formation of acetylene in the plasma. These measurements are correlated with Raman spectroscopic data.
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Joeris et al. (1992) studied this question.
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