The introduction rates of the main electron traps created by electron irradiations have been measured as a function of the composition of the Ga_1-xAlₓAs solid solution system in the $0<x<0.5$ range; they are not x dependent. Discussing the recent results given in the literature, it appears that the defects created could be VAs and IAs.
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Loualiche et al. (1982) studied this question.
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