ZnSe thin films grown on GaAs(001) substrate by molecular beam epitaxy to a thickness of 2500 Å have been studied by transmission electron microscopy (TEM). Three types of structural defect have been observed: (i) Triangle-shaped stacking faults, with the apex close to the interface, either isolated or paired. They are bounded by two different Shockley dislocations. (ii) Stacking faults generated from the surface of the ZnSe epilayer by movement of a Shockley half-loop. (iii) An array of perfect misfit dislocations. Their Burgers vectors are inclined to the interface. Most of them lie along ⟨310⟩ directions; only a few are parallel to ⟨110⟩.
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Lavagne et al. (2000) studied this question.
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