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A simple graphic method for impurity-level analysis of semiconductors is proposed. Because the concentration of majority carriers emitted from each impurity level increases monotonically with an increase of temperature (T), the product of 1/T and the total majority-carrier concentration has several peaks, and each peak results from the corresponding impurity level. Thus, from each peak value and the corresponding temperature, the density and energy level can be evaluated.
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Matsuura et al. (1996) studied this question.
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