The results of a model calculation are reported for magnetoresistance of artificial metallic multilayers. In the model, the main origin of the giant magnetoresistance in the multilayer is considered to be random distribution of magnetic and nonmagnetic ions at the interface. The effect of the random distribution of ions on the resistivity is estimated by the coherent potential approximation in each layer. The pattern behavior of the observed magnetoresistance seems to be reproduced qualitatively.
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Okiji et al. (1992) studied this question.
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