Relationship Between the 4H-SiC/SiO2 Interface Structure and Electronic Properties Explored by Electrically Detected Magnetic Resonance

In this paper, an exceptionally sensitive form of electron paramagnetic resonance called electrically detected magnetic resonance (EDMR) is utilized to investigate performance limiting imperfections at and very near the interface of 4H-silicon carbide MOSFETs. EDMR measurements are made over an extremely wide range of frequencies, 16 GHz-350 MHz. Multiple interface/near interface defects are identified and strong evidence for significant disorder at the interface region is presented.