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The results of a comparative study of the unoccupied density of states of CsI by analysis of the inelastic part of the photoelectron spectra, as well as the x-ray-absorption near-edge structure and inverse-photoemission spectra, are presented. It is found that valuable information on unoccupied electronic states in semiconductors or insulators may be obtained from an analysis of the spectral features in the low-kinetic-energy region of photoemission spectra caused by multiply-phonon-scattered electrons.
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Молодцов et al. (1991) studied this question.
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