Thermoelectric Properties and Carrier Localization in Ultrathin Layer of Nb‐Doped MoS2

Thermoelectric properties of Nb‐doped MoS2 ((Mo, Nb)S2) ultrathin layers have been experimentally investigated. At temperatures of 300–450 K, these ultrathin layers display p‐type degenerate semiconducting behavior. Because of the carrier scattering and weak localization (WL) of the conduction carriers by random potential originated from stacking faults and edge roughness, electrical resistivity decreases with rising temperature. The lack of change of the Seebeck coefficient with layer thickness suggests that the modulation of spectral conductivity is cancelled, even in the WL condition. The experimentally obtained results are consistent with first principles calculations for the density of state of the pristine MoS2 and (Mo, Nb)S2 monolayer.