Aluminum Schottky barrier heights (φn) to GaAs depend heavily upon the deposition conditions and the gallium arsenide surface stoichiometry. After annealing to approximately 320 °C diodes show φb approximately 0.69 eV in association with oxygen at the Al/GaAs interface. We infer that these ’’stabilized’’ barrier heights are associated with oxygen-induced surface-state pinning of the GaAs Fermi level. Al deposition on arsenic stabilized surfaces show variable barrier heights and no oxygen peak indicating variable Al induced states in intermediate AlGaAs layers between the Al and GaAs.
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Okamoto et al. (1982) studied this question.
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