A new synthetic method of forming the gamma‐phase of aluminum oxynitride (alon) has been proposed. alon has been successfully synthesized by the DC nitrogen plasma arc using alpha‐Al 2 O 3 and AlN as starting materials. Alon rapidly forms in a liquid state under thermal plasma. The obtained lattice parameter of alon has been determined as a function of the concentration of Al 2 O 3 . Evaporation takes place during arc melting. The condensed alon from the vapor consists of nanoscale‐sized spherical particles, and these particles are in single crystals. The evaporation mechanism of alon during arc melting is discussed. Thus, arc plasma processing is a promising method for synthesizing alon and producing the ultrafine powder.
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Fukuyama et al. (1999) studied this question.
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