Thermal analysis for improved performance of transferred-electron oscillators

Novel analytical solutions to the heat-flow equation are presented for GaAs transferred-electron devices to be operated in microwave oscillators. Uniform and linearly varying power dissipation density in the active region is considered. The results show that, to reduce operating temperatures, devices should be operated in the heat-sink anode configuration rather than the conventional top-cap anode configuration. This will ensure improved microwave power output from transferred-electron oscillators.