Ge_0975Sn_0025 320 × 256 imager chip for 16–19 μm infrared vision

We report the experimental fabrication and testing of a GeSn-based 320×256 image sensor focal plane array operating at −15°C in the 1.6–1.9 μm spectral range. For image readout, the 2D pixel array of Ge/GeSn/Ge p-i-n heterophotodiodes was flip-chip bonded to a customized silicon CMOS readout integrated circuit. The resulting camera chip was operated using back-side illumination. Successful imaging of a tungsten-filament light bulb was attained with observation of gray-scale “hot spot” infrared features not seen using a visible-light camera. The Ge wafer used in the present imaging array will be replaced in future tests by a germanium-on-silicon wafer offering thin-film Ge upon Si or on SiO2/Si. This is expected to increase the infrared responsivity obtained in back-side illumination, and it will allow an imager in a Si-based foundry to be manufactured. Our experiments are a significant step toward the realization of group IV near-mid-infrared imaging systems, such as those for night vision.