The authors report the successful demonstration of a 1.0- mu m gate InAlAs/InGaAs heterojunction FET (HFET) on top of thick InGaAs layers using lattice-matched molecular beam epitaxy (MBE). This scheme is compatible with metal-semiconductor-metal (MSM) photodetector fabrication. The authors measured the performance of InAlAs/InGaAs HFETs from 0 to 40 GHz. Device performance is characterized by peak extrinsic transconductances of 390 mS/mm and as-measured cutoff frequencies up to 30 GHz for a nominal 1.0- mu m-gate-length HFET. HFET device measurements are compared for samples growth with and without the thick underlying InGaAs optical-detector absorbing layer.>
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Harrang et al. (1991) studied this question.