In this work, room temperature magnetoelectric (ME) properties of 0.50Pb(Ni 1/3 Nb 2/3 )O 3 –0.35PbTiO 3 –0.15PbZrO 3 (PNNZT)/NiFe 2 O 4 (NFO) 2-2 bilayer thin films grown on Pt/Ti/SiO 2 /Si substrate, using pulsed laser deposition technique, are reported. Structural studies confirm single phase PNNZT/NFO 2-2 bilayer structure formation. PNNZT/NFO 2-2 bilayer thin film shows a maximum ME voltage coefficient ( α E ) of ~0.70 V cm −1 . Oe –1 at a frequency of 1 kHz. The present study reveals that PNNZT/NFO bilayer thin film can be a potential candidate for technological applications.
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Ade et al. (2018) studied this question.
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