Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
January 1, 2014Journal of Materials Chemistry C

The mechanical bending effect and mechanism of high performance and low-voltage flexible organic thin-film transistors with a cross-linked PVP dielectric layer

View Full Paper
Ask AI
Bookmark
Share

Authors

MYMingdong YiQilu University of TechnologyJGJialin GuoTianjin UniversityTYTao YangUniversity of Electronic Science and Technology of China

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Yi et al. (2014) studied this question.

synapsesocial.com/papers/6a9b4fa240d2ab6f1288290bhttps://doi.org/10.1039/c3tc32460e
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Electrical response of amorphous silicon thin-film transistors under mechanical strain2002 · 163 citations
  2. 2Controlling Electric Dipoles in Nanodielectrics and Its Applications for Enabling Air-Stable n-Channel Organic Transistors2011 · 74 citations
  3. 3Materials and Applications for Solution-Processed Organic Field-Effect Transistors2009 · 84 citations
  4. 4Low voltage flexible nonvolatile memory with gold nanoparticles embedded in poly(methyl methacrylate)2012 · 63 citations
  5. 5The strain and thermal induced tunable charging phenomenon in low power flexible memory arrays with a gold nanoparticle monolayer2013 · 39 citations