Hydrogenation and annealing kinetics in boron- and aluminum-doped silicon

Hydrogenation kinetics of the aluminum and boron acceptors in oxidized silicon have been obtained during constant current avalanche electron injection stress in contrast to constant voltage stress reported previously by us. The annealing kinetics have been measured at eight new temperatures for Al-doped metal–oxide–semiconductor capacitors over the range 120–205 °C. Four phases were observed during the thermal activation of the aluminum acceptor. The first phase consisted of an initial drop of the hole concentration. Phase two was associated with the first-order hydrogen-acceptor bond-breaking reaction. The last two phases were attributed to the second-order kinetics of the hydrogen molecule formation and breakup reaction. The thermal activation energy for the aluminum acceptor was 1.6 eV in contrast to our previous 2.2 eV based on fewer (three) annealing temperatures, giving more firmly the chemical trend, B(1.1 eV)