The “effective kinetics” of threading dislocations (TDs) in growing epitaxial films is developed on the basis of the crystallographic and geometrical considerations from Part I of the paper. A system of coupled first-order nonlinear differential equations for twenty-four families of TDs is derived and solved for several initial conditions for TD densities. Numerical solutions demonstrated two general types of asymptotic behavior with increasing film thickness: linear decrease or saturation of total TD density. This behavior agrees with experimental data on TD reduction in mismatched homogeneous buffer layers.
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Романов et al. (1997) studied this question.
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