Buried contact solar cells on textured tricrystalline CZ‐silicon wafers

Buried contact solar cells (BCSC) have been fabricated on boron‐doped p‐type tricrystalline Czochralski silicon wafers (Tri‐Si) and the output characteristics were compared with those of multi‐crystalline silicon wafers and single crystalline Czochralski wafers. Optical properties and microstructures after texturing Tri‐Si with [110] growth axis in KOH solution have been studied. The textured surface of Tri‐Si has the shape of a V‐groove, with an angle of 110° between two (111) planes. Computer simulations show that a V‐groove composed of (111) planes after texturing decreases reflectance significantly when cells are encapsulated with ethylenevinylacetate (EVA). The efficiency of BCSC fabricated on Tri‐Si was measured as 15.05% before encapsulation. An increase of 2.7 mA/cm2in short‐circuit current density is expected, due to internal reflection of light at the air/glass interface when the textured Tri‐Si cells are encapsulated.