Cathodoluminescence spectroscopy of epitaxial-lateral-overgrown nonpolar (11-20) and semipolar (11-22) GaN in relation to microstructural characterization

Low temperature spatially resolved cathodoluminescence was carried out on GaN films grown by the epitaxial-lateral-overgrowth (ELO) technique with the nonpolar (11-20) and the semipolar (11-22) orientations on R- and M-sapphires, respectively. Defect related optical transitions were identified and their localization was correlated to different regions of ELO. The sample microstructure was further investigated by plan-view and cross-section transmission electron microscopies. It is shown that the defect related emissions are mainly localized in the seed of the samples, but different defects occur as well in the wings, especially in the case of nonpolar GaN. The structural defect densities are lowest in the overgrown wings of semipolar GaN. In particular, the [0001] wing region of semipolar ELO-GaN is almost defect-free with a cathodoluminescence spectrum dominated by the GaN band-edge emission at 3.476eV.