Quasi‐normally‐off AlGaN/GaN HEMTs fabricated by fluoride‐based plasma treatment

Quasi‐normally‐off AlGaN/GaN HEMTs have been fabricated by fluoride‐based plasma treatment. SIMS measurement showed an incorporation of fluorine atoms in the AlGaN barrier layer. In the capacitance DLTS measurements of the n‐AlGaN, a new peak with an activation energy of 1.51 eV appeared for the sample with fluoride‐plasma treatment. The threshold voltage did not change for the thermal stability test at 200 °C for more than 80 days. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)