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A two-dimensional mathematical analysis is presented of the electrical properties of the diffused semiconductor resistor. An important conclusion is that substantially more electric current crowding exists within this semiconductor device than heretofore suspected, particularly in the vicinity of the ohmic contacts. Considered in this analysis is the influence on the electrical characteristics of various impurity atom distributions arising from a two-step diffusion process. The results of this investigation are presented graphically.
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Kennedy et al. (1968) studied this question.
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