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Samples of highly enriched semiconducting SWCNTs with average diameters of 1.35 nm have been prepared by combining PODOF polymer wrapping with size-exclusion chromatography. The purity of the material was determined to be >99.7% from the transfer characteristics of short-channel transistors comprising densely aligned sc-SWCNTs. The transistors have a hole mobility of up to 297 cm(2)V(-1) s(-1) and an On/Off ratio as high as 2 × 10(8).
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Hennrich et al. (2016) studied this question.
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