Pb(Zr,Ti)O3 (PZT) thin films, starting from Pb(Ac)2, ZrO(NO3)2 and Ti(n-Bu)4, were prepared by a sol–gel process on Si/Ti/Pt substrates, and a PbTiO3 (PT) buffer layer was inserted between the PZT films and the Si/Ti/Pt substrate. These films were annealed with a microwave annealing process. The microstructure and interfaces of the thin films were observed by XTEM and HRTEM. The results indicate that microwave annealing is advantageous for the preparation of PZT ferroelectric thin films.
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Song et al. (1997) studied this question.