Light-induced drift of quantum-confined electrons in semiconductor heterostructures

The effect of light-induced drift of quantum-confined electrons in semiconductor heterostructures is predicted. The effect manifests itself as the electric current in the heterostructure plane in response to optical excitation with the frequency close, but not exactly equal, to a transition frequency between levels in the heterostructure. The current reverses its direction with a change in the detuning sign, and vanishes if the radiation polarization is normal to the heterostructure plane.