We demonstrate the use of a multichannel Raman scattering system to characterize semiconductor surfaces and interfaces. The introduction of lattice displacements and hydrogen bonded to the Si atoms due to reactive ion etching of Si(100) is observed by Raman spectroscopy. The formation of subnanometer thicknesses of Pd2Si following the deposition of Pd onto Si(111) in ultrahigh vacuum has been detected in situ. These measurements are performed on arbitrary crystalline substrates, without any special sample preparation and can be made in vacuum or in any ambient atmosphere.
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Tsang et al. (1985) studied this question.