Doped Oxides as Diffusion Sources

The diffusion of phosphorus from a deposited doped oxide into silicon has been found to be consistent with a previously derived model describing doped oxides as diffusion sources. Diffusion coefficients of phosphorus in both silicon and silicon dioxide have been measured in terms of this model over surface concentrations varying from 6 × 10 17 to 2 × 10 20 atoms / cm 3 at diffusion temperatures of 1000°, 1100°, and 1200°C.