A low temporal read noise and high conversion gain reset-gate-less CMOS image sensor (CIS) has been developed and demonstrated for the first time at photoelectron-counting-level imaging. To achieve a high pixel conversion gain without fine or special processes, the proposed pixel has two unique structures: 1) coupling capacitance between the transfer gate and floating diffusion (FD) and 2) coupling capacitance between the reset gate and FD, for removing parasitic capacitances around the FD node. As a result, a CIS with the proposed pixels is able to achieve a high pixel conversion gain of 220 μV/e-and a low read noise of 0.27erms-using correlated multiple-sampling-based readout circuitry.
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Seo et al. (2015) studied this question.