Electronic structure and electron-paramagnetic-resonance properties of intrinsic defects in GaAs

The electronic structure of vacancies, antisites, self-interstitials, and some related complex defects in GaAs is calculated using a self-consistent semiempirical tight-binding technique. In particular, we give the electron densities on the various atoms to predict the electron-paramagnetic-resonance properties of the defect. The interpretations of existing experimental spectra are reexamined.