We have successfully fabricated high quality YBa/sub 2/Cu/sub 3/O/sub 7/ microwave "T" resonators on YSZ buffered P-type [100] oriented 53-56 /sup /spl Omega/-/cm silicon. The 40 to 50 nm thick yttria-stabilized zirconia buffer layer was deposited by pulsed dc magnetron sputtering at 830/spl deg/C. The 250 to 400 nm thick YBa/sub 2/Cu/sub 3/O/sub 7/ film was deposited using laser ablation at 760/spl deg/C. Results include Q values in excess of 20,000 at 3.8 GHz on a coplanar "T" resonator at temperatures below 50 K.
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Vlasov et al. (2001) studied this question.
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