Experimental characterization demonstrates ultra-low current magnetization switching in inhomogeneous Fe3GeTe2 nanoflakes, suggesting pathways for highly energy-efficient spintronic memory.
Recent advances in 2D van der Waals (vdW) ferromagnets with strong perpendicular magnetic anisotropy (PMA) have highlighted their potential for next-generation spintronic technologies. In this work, we investigate the magneto-transport properties of inhomogeneous nanoflakes of Fe3GeTe2 (F3GT), a vdW ferromagnet known for its relatively high Curie temperature and robust PMA. We observe that the regions of different thickness, which are connected by a step edge, undergo synchronized magnetization reversal due to proximity-induced exchange coupling. We find that this synchronicity is sensitive to the applied current and breaks down at large, spin-polarized charge current density, enabling a current-controlled magneto-transport response in inhomogeneous F3GT nanoflake. Further, we demonstrate a current-induced magnetization switching with an ultra-low threshold current density of Jsw = 3.3 × 104 A/cm2. This work marks a crucial step toward energy-efficient magnetic memory applications employing unconventional vdW-based novel device architectures.
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Bera et al. (2026) studied this question.
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