Grazing incidence small-angle scattering (GISAXS) of capped Ge nanodots in the soft X-ray (SX) region using an anomalous dispersion effect at the Si K absorption edge has been analyzed and compared with results obtained using hard X-rays. The GISAXS profiles obtained at about 1.8 keV were found to give the same structure information for the nanodots as obtained from conventional GISAXS in the hard X-ray region. These could be explained by distorted wave Born approximation simulations. Enhancement of the contrast by anomalous dispersion was confirmed.
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Okuda et al. (2009) studied this question.
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