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A systematic study of the effect of free carriers on the luminescence efficiency of Er-doped InP is reported. As free carrier concentration increases from 1013 to 1017 cm−3, an increase in the Er3+-related emission intensity is observed. This increase is attributed to the enhanced probability of formation of bound excitons at the rare earth centers. For carrier concentrations of greater than 3×1017 up to 1020 cm−3, the luminescence intensity is only weakly quenched. Free carrier Auger processes play a limited role in determining the Er3+ luminescence efficiency.
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Wang et al. (1994) studied this question.
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