A simple method is developed to make an interpenetrating network of poly(3-hexylthiophene-2,5-diyl) (P3HT) and fullerene (C60) by mixing P3HT solution with a thermal initiator 2,2′-azobis(isobutyronitrile) (AIBN). After mild annealing, the release of nitrogen from AIBN increases the roughness of P3HT dramatically. Significant photoluminescence quenching between the roughened donor P3HT and overlaying acceptor C60 is related to the significant increment of donor-acceptor interfacial areas. Based on this interpenetrated network of P3HT/C60, more than threefold increase in the photovoltaic efficiency of devices is achieved compared with bilayer structure. Fill factor is also improved, implying good percolation path in this heterojunction structure.
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Tong et al. (2008) studied this question.
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