The band structure of the quasi-one-dimensional layered semiconductor TiS3(001)

The experimental mapping of the band structure of TiS3(001), by momentum resolution nanospot angle resolved photoemission, is presented. The experimental band structure, derived from angle-resolved photoemission, confirms that the top of the valence band is at the center of the Brillouin zone. This trichalcogenide has a rectangular surface Brillouin zone where the effective hole mass along the chain direction is −0.95 ± 0.09 me, while perpendicular to the chain direction, the magnitude of the effective hole mass is much lower at −0.37 ± 0.1 me. The placement of the valence band well below the Fermi level suggests that this is an n-type semiconductor.