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High purity In0.5Ga0.5P epitaxial layers lattice-matched to GaAs substrates were grown by liquid phase epitaxy using a supercooling technique. The lowest carrier concentration of 3×1015 cm-3 has been achieved in the layer grown with a high temperature baked In solution and a supersaturation temperature of 6°C. A deep electron trap located at E c-0.39 eV was detected by deep level transient spectroscopy, and its concentration is below 22×1014 cm-3.
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Wu et al. (1986) studied this question.
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