We have demonstrated efficient intersubband electroabsorption in InGaAs/InAlGaAs/InAlAs step quantum wells grown by metal-organic vapor-phase epitaxy. An absorption modulation of 6 dB (Δα=2300 cm−1) at λ∼5.7 μm due to Stark shift of the intersubband resonance was achieved at a low applied voltage swing of ±0.5 V in a multipass waveguide structure. The interface intermixing was estimated by comparing experimental and theoretical Stark shifts. It is predicted that the present material in a strongly confining surface plasmon waveguide can yield an electroabsorption modulator with a peak-to-peak voltage of Vpp=0.9 V and modulation speed of f3dB≈130 GHz.
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Holmström et al. (2008) studied this question.
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