A new, fast, intersubband 1.55- mu m electrooptic modulator in the SiGe/Si/CaF/sub 2/-on-Si stepped-quantum-well system is proposed and analyzed. At applied electric fields of +or-8 V/ mu m, resonant 1-3 conduction-intersubband absorption is predicted to give 18 dB of optical extinction for narrow-linewidth transitions.>
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Friedman et al. (1993) studied this question.
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