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In selective epitaxy, growth rate is modified by the ratio of unmasked area to entire surface area and by each window area on a wafer. Such “local loading effect” phenomena were studied in a SiH2Cl2/HCl/H2 selective epitaxial growth system. The effect is attributed to species spatial concentration variation which is generated by coexistence of a masked area and windows on a wafer. The growth condition which can suppress the effect is obtained for VLSI device fabrication.
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Ishitani et al. (1984) studied this question.
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