High quality and large-area graphene synthesis with a high growth rate using plasma-enhanced CVD

The current trend in graphene synthesis is to use thermal chemical vapor deposition(CVD) at the temperature of 1000 °C or higher. For industrial use of graphene as transparent conductive films, higher throughput of graphene synthesis is necessary. We were among the first to adopt the plasma-enhanced CVD method, and have developed a process of high-speed large-area deposition for transparent conductive film applications. The development and a method to remove impurities from the process are presented in this paper. We report improvement in graphene film quality and other properties by decreasing the nucleus density using plasma-enhanced CVD.