Comparative analysis of the conditions for the formation of shallow acceptor centers upon high-temperature annealing in silicon irradiated with electrons, neutrons, and energetic ions is performed. The introduction of a sufficiently large (in comparison with the initial concentration of impurities and defects) concentration of radiation-induced distortions of the silicon lattice is shown to lead to the formation of thermal acceptors stable up to annealing temperature of ∼650°C. The acceptor formation is supposed to be due to the interaction of background acceptor impurities (supposedly boron) with vacancies “stored” in multivacancy clusters and released upon their breakup.
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Stas et al. (2000) studied this question.
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